Large-Scale Variability Characterization and Robust Design Techniques for Nanoscale SRAM
نویسندگان
چکیده
Large-Scale Variability Characterization and Robust Design Techniques for Nanoscale SRAM
منابع مشابه
Interactions of Technology and Design in Nanoscale SRAM
Continued advances in silicon technology have enabled the VLSI industry to shrink the area of the transistor by roughly a factor of two with each successive technology node. This trend has continued unabated for the past five decades and has made personal computing devices ubiquitous in modern culture. Made possible by continuous advances in CMOS technology and fueled by a growing and fiercely ...
متن کاملDesign and Verification of Low Power SRAM using 8T SRAM Cell Approach
SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. Advances in chip designing have made possible the design of chips at high integration and fast performance. Lowering power consumption and increasing noise margin have become two central topics in every state of SRAM designs.The Conventional 6T SRAM cell is very much pr...
متن کاملA weighted metric method to optimize multi-response robust problems
In a robust parameter design (RPD) problem, the experimenter is interested to determine the values of con-trol factors such that responses will be robust or insensitive to variability of the noise factors. Response sur-face methodology (RSM) is one of the effective methods that can be employed for this purpose. Since quality of products or processes is usually evaluated through several quality ...
متن کاملA Review on Low Power Sram
The main issue in VLSI design are optimizing speed, scaling in silicon technology and increased packing density. These issues account for increased power dissipation in SoC (System on Chips) making them unsuitable for portable operations. Since SRAM consist of almost 60% of VLSI circuits, hence, it is needed that a low power SRAM design to maximize the run time with minimum requirements on size...
متن کاملDOE-ILP Assisted Conjugate-Gradient Optimization of High-κ/Metal-Gate Nano-CMOS SRAM
Low power consumption and stability in Static Random Access Memories (SRAMs) is essential for embedded multimedia and communication applications. This paper presents a novel design flow for power minimization of nano-CMOS SRAMs, while maintaining their stability. A 32 nm High-κ/Metal-Gate SRAM has been used as example circuit. The baseline SRAM circuit is subjected to power minimization using a...
متن کامل